Improved Semiconductor Surface Passivation

Research in image sensors is addressing the growing demands in various sectors, such as astronomy and radiology, in which precise and high-quality images are required. A persistent issue is the presence of voids within the bonding interface of image sensors. These voids can significantly detract from image quality, performance, and lifespan because they lead to subpar connection between the image sensor and the support wafer. Current methods of producing large-format image sensors have been unable to adequately eliminate or significantly reduce these voids in the bonding interface. 

Technology Description

The technology involves a new manufacturing process that creates large-format, void-free image sensors by regulating the hydrogen concentrations in the silicon oxide layers of the image sensor and the supporting wafer. This method specifically targets the reduction or elimination of voids in the bonding interface. It is applicable to any wafer, including active circuitry, that necessitates a secondary wafer such as a support wafer. This novel process is differentiated from existing technologies by its ability to produce thin, large-area image sensors suitable for ultraviolet (UV) and soft X-ray imaging. Its prime application areas include future astronomy missions and the radiology field. The technique's versatility lies in its capacity to be applied to any wafer that incorporates dynamic circuitry and mandates a second wafer.