Spin-Based Electrometry with Solid-State Defects

The technology falls into the field of magnetic resonance instrumentation, particularly in the context of quantifying strain or electric fields. With the evolution of science and technology, measurements of these fields have become essential for various analyses in electronics, biotechnology, and other disciplines. However, achieving high sensitivity and precision in measurement of these fields under zero-bias conditions has always been a challenging affair. Current techniques mainly encompass complex mechanisms that may require extensive effort and resources for obtaining accurate measurements. For electric and strain fields, the inability to correctly determine magnitude or direction may lead to catastrophic failures in critical applications. Therefore, there is a need for an advanced technology that can assure precise detection and measurement, even under zero-bias conditions.

Technology Description

The described technology uses a unique sample that contains a crystal host composed of solid-state defects. When exposed to zero-bias magnetic field, the sample experiences an electric or strain field. As the suitable microwave and/or optical radiation is absorbed by these solid-state defects, they emit fluorescence associated with hyperfine transitions. The emitted fluorescence is then used to determine the magnitude and/or the direction of the electric or strain field. The unique aspect of this technology is the way it controls and modulates the assembly of individual components to maintain a zero-bias magnetic field. It further generates an optically detected magnetic resonance (ODMR) spectrum, again either with or without optical excitation, by using suitable microwave radiation. The signals are based on the hyperfine state transitions that are sensitive to the electric/strain fields, making it possible to accurately quantify the magnitude and direction of the field of interest.