Publications
MBE back-illuminated silicon Geiger-mode avalanche photodiodes for enhanced ultraviolet response
Summary
Summary
We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin ( 10 um) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes...
Adaptive optics wavefront sensors based on photon-counting detector arrays
Summary
Summary
For adaptive optics systems, there is a growing demand for wavefront sensors that operate at higher frame rates and with more pixels while maintaining low readout noise. Lincoln Laboratory has been investigating Geiger·mode avalanche photodiode arrays integrated with CMOS readout circuits as a potential solution. This type of sensor counts...
Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays
Summary
Summary
We present a unique hybridization process that permits high-performance back-illuminated silicon Geiger-mode avalanche photodiodes (GM-APDs) to be bonded to custom CMOS readout integrated circuits (ROICs) - a hybridization approach that enables independent optimization of the GM-APD arrays and the ROICs. The process includes oxide bonding of silicon GM-APD arrays to...
A multi-frame, megahertz CCD imager
Summary
Summary
The Los Alamos National Laboratory's Dual Axis Radiographic Hydrodynamic Test Facility (DARHT) generates flash radiographs of explosive experiments using two linear induction electron accelerators situated at right angles. The DARHT second axis accelerator generates an 18-MeV, 2 kA, 2 sec electron beam which is converted or "chopped" into four individual...
A 64 x 64-pixel CMOS test chip for the development of large-format ultra-high-speed snapshot imagers
Summary
Summary
A 64 x 64-pixel test circuit was designed and fabricated in 0.18- m CMOS technology for investigating high-speed imaging with large-format imagers. Several features are integrated into the circuit architecture to achieve fast exposure times with low-skew and jitter for simultaneous pixel snapshots. These features include an H-tree clock distribution...
Multifocal multiphoton microscopy (MMM) at a frame rate beyond 600 Hz
Summary
Summary
We introduce a multiphoton microscope for high-speed three-dimensional (3D) fluorescence imaging. The system combines parallel illumination by a multifocal multiphoton microscope (MMM) with parallel detection via a segmented high-sensitivity charge-couple device (CCD) camera. The instrument consists of a Ti-sapphire laser illuminating a microlens array that projects 36 foci onto the...
Lincoln Laboratory high-speed solid-state imager technology
Summary
Summary
Massachusetts Institute of Technology, Lincoln Laboratory (MIT LL) has been developing both continuous and burst solid-state focal-plane-array technology for a variety of high-speed imaging applications. For continuous imaging, a 128 ¿ 128-pixel charge coupled device (CCD) has been fabricated with multiple output ports for operating rates greater than 10,000 frames...
LLiST - a new star tracker camera for tip-tilt correction at IOTA
Summary
Summary
The tip-tilt correction system at the Infrared Optical Telescope Array (IOTA) has been upgraded with a new star tracker camera. The camera features a backside-illuminated CCD chip offering doubled overall quantum efficiency and a four times higher system gain compared to the previous system. Tests carried out to characterize the...
Dynamic response of an electronically shuttered CCD imager
Summary
Summary
The dynamic response of an electronically shuttered charge-coupled device (CCD) imager to nanosecond voltage pulses has been investigated. Measurements show that the shutter can be dynamically opened and closed in nanosecond times. For the shutter opening, simulations indicate that the collection of photoelectrons occurs in times much shorter than that...
High-fill-factor, burst-frame-rate charge-coupled device
Summary
Summary
A 512x512-element, multi-frame charge-coupled device (CCD) has been developed for collecting four sequential image frames at megahertz rates. To operate at fast frame rates with high sensitivity, the imager uses an electronic shutter technology developed for back-illuminated CCDs. Device-level simulations were done to estimate the CCD collection well spaces for...