Publications

Intra focal plane array (FPA) crosstalk is a primary development limiter of large, fine-pixel Geiger-mode avalanche photodiode (Gm-APD) arrays beyond 256×256 pixels. General analysis methods and results from MIT Lincoln Laboratory (MIT/LL) InP-based detector arrays will be presented.

Avalanche photodiodes (APDs) have been fabricated in order to determine the impact ionization coefficients of electrons (alpha) and holes (beta) in AlxGa1-xAsySb1-y lattice matched to GaSb for three alloy compositions: (x=0.40, y=0.035), (x=0.55, y=0.045), and (x=0.65, y=0.054). The impact ionization coefficients were calculated from photomultiplication measurements made on specially designed APDs, which allowed for both pure electron and pure hole injection in the same device. Photo-multiplication measurements were made at temperatures ranging from 77K to 300K for all three alloys. A quasi-physical model with an explicit temperature dependence was used to express the impact ionization coefficients as a function of electric-field strength and temperature. For all three alloys, it was found that alpha < beta at any given temperature. In addition, the values of the impact ionization coefficients were found to decrease as the aluminum concentration of the AlGaAsSb alloy was increased. A value between 1.2 and 4.0 was found for beta/x, which is dependent on temperature, alloy composition, and electric-field strength.

A monolithic two-dimensional array of surface-emitting AlGaAs diode lasers with dry-etched vertical facets and parabolic deflecting mirrors was mounted junction-side up on a W / Cu microchannel heatsink and evaluated under continuous-wave (CW) operating conditions. Both the facets and parabolic deflecting mirrors were etched using chlorine ion-beam-assistd etching. Threshold current densities of different sections of the array were consistently around 240 A/cm (to the second power), and measured CW differential quantum efficiencies were in the 46-48% range. CW power densities as high as 148 W/cm (to the second power) were achieved with an average temperature rise of less than 25 degrees C in this junction-side-up configuration.