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Germanium CCDs for large-format SWIR and x-ray imaging

May 25, 2017
  |
Journal Article
Author:
Christopher W. Leitz
…
Published in:
J. Instrum., Vol. 12, No. 5, May 2017, C05014.
Topic:
photonics
R&D area:
R&D group:

Summary

Germanium exhibits high sensitivity to short-wave infrared (SWIR) and X-ray radiation, making it an interesting candidate for imaging applications in these bands. Recent advances in germanium processing allow for high-quality charge-coupled devices (CCDs) to be realized in this material. In this article, we discuss our evaluation of germanium as an absorber material for CCDs via fabrication and analysis of discrete devices such as diodes, metal-insulator-semiconductor capacitors, and buried-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We then describe fabrication of our first imaging device on germanium, a 32 x 1 x 8.1 um linear shift register. Based on this work, we find that germanium is a promising material for CCDs imaging in the SWIR and X-ray bands.
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Summary

Germanium exhibits high sensitivity to short-wave infrared (SWIR) and X-ray radiation, making it an interesting candidate for imaging applications in these bands. Recent advances in germanium processing allow for high-quality charge-coupled devices (CCDs) to be realized in this material. In this article, we discuss our evaluation of germanium as an...

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Germanium CCDs for large-format SWIR and x-ray imaging

MEMS microswitches for reconfigurable microwave circuitry

March 1, 2001
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Journal Article
Author:
Sean M. Duffy
…
Published in:
IEEE Microw. Wirel. Compon. Lett., Vol. 11, No. 3, March 2001, pp. 106-108.
Topic:
antennas
R&D area:
R&D group:

Summary

The performance is reported for a new microelectromechanical structure (MEMS) cantilever microswitch. We report on both dc- and capacitively-contacted microswitches. The dc-contacted microswitches have contact resistance of less than 1 ohm, and the RF loss of the switch up to 40 GHz in the closed position is 0.1-0.2 dB. Capacitively-contacted switches have an impedance ratio of 141:1 from the open to closed state and in the closed position have a series capacitance of 1.2 pF. The capacitively-contacted switches have been measured up to 40 GHz with S(21) less than -0.7 dB across the 5-40 GHz band.
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Summary

The performance is reported for a new microelectromechanical structure (MEMS) cantilever microswitch. We report on both dc- and capacitively-contacted microswitches. The dc-contacted microswitches have contact resistance of less than 1 ohm, and the RF loss of the switch up to 40 GHz in the closed position is 0.1-0.2 dB. Capacitively-contacted...

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MEMS microswitches for reconfigurable microwave circuitry

Monolithic 3.3V CCD/SOI-CMOS Imager Technology

December 10, 2000
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Conference Paper
Author:
Vyshnavi Suntharalingam
…
Published in:
IEEE Int. Eelctron Devices Mtg., 10-13 December 2000, pp. 30.3.1-30.3.4.
Topic:
semiconductor (CMOS)
R&D area:
R&D group:

Summary

We have developed a merged CCD/SOI-CMOS technology that enables the fabrication of monolithic, low-power imaging systems on a chip. The CCD's, fabricated in the bulk handle wafer, have charge-transfer inefficiencies of about 1x10(-5) and well capacities of more than 100,000 electrons with 3.3-V clocks and 8x8um pixels. Fully depleted 0.35pm SOI-CMOS ring oscillators have stage delay of 48ps at 3.3V. We demonstrate for the first time an integrated image sensor with charge-domain A/D conversion and on-chip clocking.
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Summary

We have developed a merged CCD/SOI-CMOS technology that enables the fabrication of monolithic, low-power imaging systems on a chip. The CCD's, fabricated in the bulk handle wafer, have charge-transfer inefficiencies of about 1x10(-5) and well capacities of more than 100,000 electrons with 3.3-V clocks and 8x8um pixels. Fully depleted 0.35pm...

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Monolithic 3.3V CCD/SOI-CMOS Imager Technology

MEMs microswitch arrays for reconfigurable distributed microwave components

July 16, 2000
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Conference Paper
Author:
Carl O. Bozler
…
Published in:
IEEE Antennas and Propagation Society Int. Symp. Digest, Vol. 2, 16-21 July 2000, pp. 587-591.
Topic:
antennas
R&D area:
R&D group:

Summary

A revolutionary device technology and circuit concept is introduced for a new class of reconfigurable microwave circuits and antennas. The underlying mechanism is a compact MEMs cantilever microswitch that is arrayed in two-dimensions. The switches have the ability to be individually actuated. By constructing distributed circuit components from an array, the individual addressability of the microswitch provides the means to reconfigure the circuit trace and, thus, provides the ability to either fine-tune or completely reconfigure the circuit element's behavior. Device performance can be reconfigured over a decade in bandwidth in the nominal frequency range of 1 to 100 GHz. In addition, other circuit-element attributes can be reconfigured such as instantaneous bandwidth, impedance, and polarization (for antennas). This will enable the development of next-generation communication, radar and surveillance systems with agiIity to reconfigure operation for diverse operating bands, modes, power levels, and waveforms.
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Summary

A revolutionary device technology and circuit concept is introduced for a new class of reconfigurable microwave circuits and antennas. The underlying mechanism is a compact MEMs cantilever microswitch that is arrayed in two-dimensions. The switches have the ability to be individually actuated. By constructing distributed circuit components from an array...

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MEMs microswitch arrays for reconfigurable distributed microwave components
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