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Gigahertz (GHz) hard X-ray imaging using fast scintillators

Summary

Gigahertz (GHz) imaging technology will be needed at high-luminosity X-ray and charged particle sources. It is plausible to combine fast scintillators with the latest picosecond detectors and GHz electronics for multi-frame hard X-ray imaging and achieve an inter-frame time of elss than 10 ns. The time responses and light yield of LYSO, LaBr3, BaF2 and ZnO are measured using an MCP-PMT detector. Zinc Oxide (ZnO) is an attractive material for fast hard X-ray imaging based on GEANT4 simulations and previous studies, but the measured light yield from the samples is much lower than expected.
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Summary

Gigahertz (GHz) imaging technology will be needed at high-luminosity X-ray and charged particle sources. It is plausible to combine fast scintillators with the latest picosecond detectors and GHz electronics for multi-frame hard X-ray imaging and achieve an inter-frame time of elss than 10 ns. The time responses and light yield...

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Slab-coupled optical waveguide (SCOW) devices and photonic integrated circuits (PICs)

Summary

We review recent advances in the development of slab-coupled optical waveguide (SCOW) devices, progress toward a flexible photonic integration platform containing both conventional high-confinement and SCOW ultra-low confinement devices, and applications of this technology.
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Summary

We review recent advances in the development of slab-coupled optical waveguide (SCOW) devices, progress toward a flexible photonic integration platform containing both conventional high-confinement and SCOW ultra-low confinement devices, and applications of this technology.

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Pixel-processing imager development for directed energy applications

Summary

Tactical high-energy laser (HEL) systems face a range of imaging-related challenges in wavefront sensing, acquiring and tracking targets, selecting the HEL aimpoint, and assessing lethality. Accomplishing these functions in a timely fashion may be limited by competing requirements on total field of regard, target resolution, signal to noise, and focal plane readout bandwidth. In this paper, we explore the applicability of an emerging pixel-processing imager (PPI) technology to these challenges. The on-focal-plane signal processing capabilities of the MIT Lincoln Laboratory PPI technology have recently been extended in support of directed energy applications. We describe this work as well as early results from a new PPI-based short-wave-infrared focal plane readout capable of supporting diverse applications such as low-latency Shack-Hartmann wavefront sensing, centroid computation, and Fitts correlation tracking.
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Summary

Tactical high-energy laser (HEL) systems face a range of imaging-related challenges in wavefront sensing, acquiring and tracking targets, selecting the HEL aimpoint, and assessing lethality. Accomplishing these functions in a timely fashion may be limited by competing requirements on total field of regard, target resolution, signal to noise, and focal...

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Stepped notch antenna array used as a low thermal resistance heat sink

Summary

A stepped notch antenna at Ku-band is developed to provide a thermal heat sink for active arrays. The antenna with forced air cooling provides up to 0.4 degrees C/W of thermal resistance. The antenna integration with a printed circuit board allows for high volume surface mount assembly of active devices.
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Summary

A stepped notch antenna at Ku-band is developed to provide a thermal heat sink for active arrays. The antenna with forced air cooling provides up to 0.4 degrees C/W of thermal resistance. The antenna integration with a printed circuit board allows for high volume surface mount assembly of active devices.

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A tunable AC atom interferometer magnetometer

Published in:
QIM 2013, Quantum Information and Measurement, 17-20 June 2013.

Summary

We demonstrate an atom interferometer designed to measure magnetic fields and field gradients. Here, we study various pulse sequences and show how they can be manipulated to filter unwanted frequencies and to enhance desired frequencies.
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Summary

We demonstrate an atom interferometer designed to measure magnetic fields and field gradients. Here, we study various pulse sequences and show how they can be manipulated to filter unwanted frequencies and to enhance desired frequencies.

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Single event transients in digital CMOS - a review

Published in:
IEEE Trans. Nucl. Sci., Vol. 60, No. 3, June 2013, pp. 1767-90.

Summary

The creation of soft errors due to the propagation of single event transients (SETs) is a significant reliability challenge in modern CMOS logic. SET concerns continue to be exacerbated by Moore's Law technology scaling. This paper presents a review of digital single event transient research, including: a brief historical overview of the emergence of SET phenomena, a review of the present understanding of SET mechanisms, a review of the state-of-the-art in SET testing and modelling, a discussion of mitigation techniques, and a discussion of the impact of technology scaling trends on future SET significance.
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Summary

The creation of soft errors due to the propagation of single event transients (SETs) is a significant reliability challenge in modern CMOS logic. SET concerns continue to be exacerbated by Moore's Law technology scaling. This paper presents a review of digital single event transient research, including: a brief historical overview...

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High-voltage GaN-on-silicon Schottky diodes

Published in:
CS ManTech 2013, 13-16 May 2013.
Topic:

Summary

M/A-COM Technology Solutions has continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN-on-silicon two and three-terminal high-voltage/high current switching devices. The initial developmental goals were for a Schottky diode that has a reverse breakdown blocking voltage of >600 volts and is capable of handling 10 amperes of forward current. A comparison of the M/A-COM Technology Solutions lateral GaN Schottky diode on-resistance as a function of reverse breakdown voltage for a number of both lateral and vertical GaN Schottky diode geometries taken from the literature is presented. The substrates employed for all of these data points are either sapphire, SiC, silicon, and even one study which utilized single crystal GaN. Also included in this plot are theoretical limits for the basic materials typically used in GaN Schottky diode construction. It can be seen that the reverse breakdown results of approximately 1500 volts for M/A/-COM Technology Solutions lateral anode connected field GaN Schottky diodes on silicon substrates compare extremely favorably with the reported performance of the state-of-the-art devices, regardless of substrate material or design geometry.
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Summary

M/A-COM Technology Solutions has continuing joint development efforts sponsored by the Department of Energy with MIT main campus and MIT Lincoln Laboratory to develop GaN-on-silicon two and three-terminal high-voltage/high current switching devices. The initial developmental goals were for a Schottky diode that has a reverse breakdown blocking voltage of >600...

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Single-mode tapered quantum cascade lasers

Published in:
Appl. Phys. Lett., Vol. 102, No. 18, 6 May 2013.

Summary

We demonstrate tapered quantum cascade lasers monolithically integrated with a distributed Bragg reflector acting as both a wavelength-selective back mirror and a transverse mode filter. Each of the 14 devices operates at a different wavelength between 9.2 and 9.7 um, where nine devices feature single-mode operation at peak powers between 0.3 and 1.6W at room temperature. High output power and excellent beam quality with peak brightness values up to 1.6MW cm^-2 sr^-1 render these two-terminal devices highly suitable for stand-off spectroscopy applications.
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Summary

We demonstrate tapered quantum cascade lasers monolithically integrated with a distributed Bragg reflector acting as both a wavelength-selective back mirror and a transverse mode filter. Each of the 14 devices operates at a different wavelength between 9.2 and 9.7 um, where nine devices feature single-mode operation at peak powers between...

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High power (>5 W) lambda ~9.6 um tapered quantum cascade lasers grown by OMVPE

Summary

AlInAS/GaInAs superlattices (SLs) with barrier and well layers of various thicknesses were grown by organometallic vapor phase epitaxy to optimize growth of quantum cascade lasers (QCLs). High-resolution x-ray diffraction data of nominally lattice-matched SLs show a systematic shift toward more compressively strained SLs as the barrier/well layer thicknesses are decreased below about 10 nm. This shift is attributed to In surface segregation in both AlInAs and GaInAs. This shift is compensated for in the growth of ultra-thin layers in QCL structures. QCLs with tapered gain regions and emitting at 9.6 um are demonstrated with peak power as high as 5.3 W from one facet at 20 degrees C.
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Summary

AlInAS/GaInAs superlattices (SLs) with barrier and well layers of various thicknesses were grown by organometallic vapor phase epitaxy to optimize growth of quantum cascade lasers (QCLs). High-resolution x-ray diffraction data of nominally lattice-matched SLs show a systematic shift toward more compressively strained SLs as the barrier/well layer thicknesses are decreased...

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High voltage GaN-on-silicon HEMT

Published in:
Phys. Status Solidi C, Vol. 10, No. 5, May 2013, pp. 844-8.
Topic:

Summary

M/A-COM Technology Solutions has continued in the joint development efforts sponsored by the Department of Energy with MIT main campus amd MIT Lincoln Labs to develop GaN on silicon three terminal high voltage/high current HEMT switching devices. The first year developmental goals were for a three terminal structure that has a reverse breakdown characteristic of >1200 V and is capable of switching 10 amperes of current. An average three terminal breakown of 1322 V was achieved on a single finger 250 um GaN on silicon HEMT device utilizing a source connected field plate with a 4.5 um drain region overlap. An individual device breakdown on a single finger 250 um GaN on silicon HEMT device with a SCFP of >1630 V was measured at a current of 250 uA (1mA/mm) - One of the highest yet reported for GaN on silicon in the industry.
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Summary

M/A-COM Technology Solutions has continued in the joint development efforts sponsored by the Department of Energy with MIT main campus amd MIT Lincoln Labs to develop GaN on silicon three terminal high voltage/high current HEMT switching devices. The first year developmental goals were for a three terminal structure that has...

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