Publications

An active filter with a 50 omega buffer suitable as an anti-alias filter to drive a highly linear ADC is implemented in 0.13 um SiGe BiCMOS. This 6th-order Chebyshev filter has a 3 dB cutoff frequency of 28.3 MHz and achieves 36.5 dBm OIP3. Nonlinear digital equalization further improves OIP3...

Uni-traveling-carrier waveguide photodiodes (PDs) with a variable optical confinement mode size transformer are demonstrated. The optical mode is large at the input for minimal front-end saturation and the mode transforms as the light propagates so that the absorption profile is optimized for both high-power and high-speed performance. Two differently designed...

Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation...

Two 20-channel second-order optical filter banks have been fabricated. With tuning, the requirements for a wavelength multiplexed photonic AD-converter (insertion loss 1-3 dB, extinction >30 dB and optical bandwidth 22-27 GHz) are met.

We have demonstrated a wafer-scale back-illumination process for silicon Geiger-mode avalanche photodiode arrays using Molecular Beam Epitaxy (MBE) for backside passivation. Critical to this fabrication process is support of the thin ( 10 um) detector during the MBE growth by oxide-bonding to a full-thickness silicon wafer. This back-illumination process makes...

MIT Lincoln Laboratory is conducting a technology demonstration of affordable Multifunction Phased Array Radar (MPAR) technology for Next Generation air traffic control and national weather surveillance services. Aggressive cost and performance goals have been established for the system. The array architecture and its realization using custom Transmit and Receive Integrated...

In this paper we study the uniformity of up to 150 mm in diameter wafer-scale III-V epitaxial transfer to the Si-on-insulator substrate through the O2 plasma-enhanced low-temperature (300°C) direct wafer bonding. Void-free bonding is demonstrated by the scanning acoustic microscopy with sub-um resolution. The photoluminescence (PL) map shows less than...

The absolute Raman scattering cross sections (σRS) for the 471, 217, and 153 cm−1 modes of sulfur were measured as 6.0 ± 1.2 × 10−27, 7.7 ± 1.6 × 10−27, and 1.2 ± 0.24 × 10−26 cm2 at 815, 799, and 794 nm, respectively, using a 785-nm pump laser. The...

The effective work function of a reactively sputtered TiN metal gate is shown to be tunable from 4.30 to 4.65 eV. The effective work function decreases with nitrogen flow during reactive sputter deposition. Nitrogen annealing increases the effective work function and reduces Dit. Thinner TiN improves the variation in effective...

The semiconductor slab-coupled optical waveguide (SCOW) concept is a versatile device platform that has enabled new classes of high-power, low-noise single-frequency lasers, mode-locked lasers, optical amplifiers, and photodiodes for analog optical links and photonic analog-to-digital converters.