Publications
Time delay integration and in-pixel spatiotemporal filtering using a nanoscale digital CMOS focal plane readout
Summary
Summary
A digital focal plane array (DFPA) architecture has been developed that incorporates per-pixel full-dynamic-range analog-to-digital conversion and orthogonal-transfer-based realtime digital signal processing capability. Several long-wave infrared-optimized pixel processing focal plane readout integrated circuit (ROIC) designs have been implemented, each accommodating a 256 x 256 30-um-pitch detector array. Demonstrated in this...
Channel engineering of SOI MOSFETs for RF applications
Summary
Summary
Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has...
Wafer-scale 3D integration of InGaAs image sensors with Si readout circuits
Summary
Summary
In this work, we modified our wafer-scale 3D integration technique, originally developed for Si, to hybridize InP-based image sensor arrays with Si readout circuits. InGaAs image arrays based on the InGaAs layer grown on InP substrates were fabricated in the same processing line as silicon-on-insulator (SOI) readout circuits. The finished...
Beam combining of quantum cascade laser arrays
Summary
Summary
Wavelength beam combining was used to co-propagate beams from 28 elements in an array of distributed-feedback quantum cascade lasers (DFB-QCLs). The beam-quality product of the array, defined as the product of near-field spot size and far-field divergence for the entire array, was improved by a factor of 21 by using...
High density plasma etching of titanium nitride metal gate electrodes for fully depleted silicon-on-insulator subthreshold transistor integration
Summary
Summary
Etching of TiN metal gate materials as a part of an integrated flow to fabricate fully depleted silicon-on-insulator ultralow-power transistors is reported. TiN etching is characterized as a function of source power, bias power, gas composition, and substrate temperature in a high density inductively coupled plasma reactor. Under the conditions...
New generation of digital microfluidic devices
Summary
Summary
This paper reports on the design, fabrication, and performance of micro-sized fluidic devices that use electrowetting to control and transport liquids. Using standard microfabrication techniques, new pumping systems are developed with significantly more capability than open digital microfluidic systems that are often associated with electrowetting. This paper demonstrates that, by...
Graphene-on-insulator transistors made using C on Ni chemical-vapor deposition
Summary
Summary
Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO2 substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.
A multi-frame, megahertz CCD imager
Summary
Summary
The Los Alamos National Laboratory's Dual Axis Radiographic Hydrodynamic Test Facility (DARHT) generates flash radiographs of explosive experiments using two linear induction electron accelerators situated at right angles. The DARHT second axis accelerator generates an 18-MeV, 2 kA, 2 sec electron beam which is converted or "chopped" into four individual...
Lithographically directed surface modification
Summary
Summary
The directed assembly of polystyrene-block-poly(methyl methacrylate) films on a variety of photolytically nanopatterned siloxane-modified surfaces was investigated. The amount of siloxane removal is related to the exposure dose of a 157 nm laser. The modified surfaces were imaged using a 157 nm interference exposure system to lithographically define areas of...
Ultra-wideband offset bicone/dipole antenna: simulations and measurements
Summary
Summary
An ultrawideband (UWB) antenna has been developed for operation in the 60 MHz to 18 GHz frequency range. This antenna is a new type--an offset bicone/dipole design that allows for vertically polarized omnidirectional coverage over an instantaneous 300:1 bandwidth. Numerical electromagnetic simulations with the finite-element method (FEM) were used to...