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Time delay integration and in-pixel spatiotemporal filtering using a nanoscale digital CMOS focal plane readout

Summary

A digital focal plane array (DFPA) architecture has been developed that incorporates per-pixel full-dynamic-range analog-to-digital conversion and orthogonal-transfer-based realtime digital signal processing capability. Several long-wave infrared-optimized pixel processing focal plane readout integrated circuit (ROIC) designs have been implemented, each accommodating a 256 x 256 30-um-pitch detector array. Demonstrated in this paper is the application of this DFPA ROIC architecture to problems of background pedestal mitigation, wide-field imaging, image stabilization, edge detection, and velocimetry. The DFPA architecture is reviewed, and pixel performance metrics are discussed in the context of the application examples. The measured data reported here are for DFPA ROICs implemented in 90-nm CMOS technology and hybridized to HgxCd1-xTe (MCT) detector arrays with cutoff wavelengths ranging from 7 to 14.5 m and a specified operating temperature of 60 K-80 K.
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Summary

A digital focal plane array (DFPA) architecture has been developed that incorporates per-pixel full-dynamic-range analog-to-digital conversion and orthogonal-transfer-based realtime digital signal processing capability. Several long-wave infrared-optimized pixel processing focal plane readout integrated circuit (ROIC) designs have been implemented, each accommodating a 256 x 256 30-um-pitch detector array. Demonstrated in this...

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Channel engineering of SOI MOSFETs for RF applications

Summary

Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has no body and drain-extension implants.
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Summary

Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has...

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Wafer-scale 3D integration of InGaAs image sensors with Si readout circuits

Summary

In this work, we modified our wafer-scale 3D integration technique, originally developed for Si, to hybridize InP-based image sensor arrays with Si readout circuits. InGaAs image arrays based on the InGaAs layer grown on InP substrates were fabricated in the same processing line as silicon-on-insulator (SOI) readout circuits. The finished 150-mm-diameter InP wafer was then directly bonded to the SOI wafer and interconnected to the Si readout circuits by 3D vias. A 1024 x 1024 diode array with 8-um pixel size is demonstrated. This work shows the wafer-scale 3D integration of a compound semiconductor with Si.
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Summary

In this work, we modified our wafer-scale 3D integration technique, originally developed for Si, to hybridize InP-based image sensor arrays with Si readout circuits. InGaAs image arrays based on the InGaAs layer grown on InP substrates were fabricated in the same processing line as silicon-on-insulator (SOI) readout circuits. The finished...

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Beam combining of quantum cascade laser arrays

Published in:
Opt. Express, Vol. 17, No. 18, 31 August 2009, pp. 16216-16224.

Summary

Wavelength beam combining was used to co-propagate beams from 28 elements in an array of distributed-feedback quantum cascade lasers (DFB-QCLs). The beam-quality product of the array, defined as the product of near-field spot size and far-field divergence for the entire array, was improved by a factor of 21 by using wavelength beam combining. To demonstrate the applicability of wavelength beam combined DFB-QCL arrays for remote sensing, we obtained the absorption spectrum of isopropanol at a distance of 6 m from the laser array.
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Summary

Wavelength beam combining was used to co-propagate beams from 28 elements in an array of distributed-feedback quantum cascade lasers (DFB-QCLs). The beam-quality product of the array, defined as the product of near-field spot size and far-field divergence for the entire array, was improved by a factor of 21 by using...

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High density plasma etching of titanium nitride metal gate electrodes for fully depleted silicon-on-insulator subthreshold transistor integration

Published in:
J. Vacuum Sci. Technol. B, Microelectron. Process. Phenon., Vol. 27, No. 6, p. 2472-2479.

Summary

Etching of TiN metal gate materials as a part of an integrated flow to fabricate fully depleted silicon-on-insulator ultralow-power transistors is reported. TiN etching is characterized as a function of source power, bias power, gas composition, and substrate temperature in a high density inductively coupled plasma reactor. Under the conditions used in this work, the TiN etch rate appears to be ion flux limited and exhibits a low ion enhanced etching activation energy of 0.033 eV. Notching of the polysilicon layer above the TiN may occur during the polysilicon overetch step as well as the TiN overetch step. Notching is not significantly affected by charging of the underlying gate dielectric under the conditions used. By optimizing the plasma etch process conditions, TiN:SiO2 selectivity of nearly 1000:1 is achieved, and a two-step TiN main etch and TiN overetch process yields well-defined metal gate structures without severe gate profile artifacts.
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Summary

Etching of TiN metal gate materials as a part of an integrated flow to fabricate fully depleted silicon-on-insulator ultralow-power transistors is reported. TiN etching is characterized as a function of source power, bias power, gas composition, and substrate temperature in a high density inductively coupled plasma reactor. Under the conditions...

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New generation of digital microfluidic devices

Published in:
J. Microelectromech. Syst., Vol. 18, No. 4, August 2009, pp. 845-851.

Summary

This paper reports on the design, fabrication, and performance of micro-sized fluidic devices that use electrowetting to control and transport liquids. Using standard microfabrication techniques, new pumping systems are developed with significantly more capability than open digital microfluidic systems that are often associated with electrowetting. This paper demonstrates that, by integrating closed microchannels with different channel heights and using electrowetting actuation, liquid interfaces can be controlled, and pressure work can be done, resulting in fluid pumping. The operation of two different on-chip pumps and devices that can form water drops is described. In addition, a theory is presented to explain the details of single-electrode actuation in a closed channel.
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Summary

This paper reports on the design, fabrication, and performance of micro-sized fluidic devices that use electrowetting to control and transport liquids. Using standard microfabrication techniques, new pumping systems are developed with significantly more capability than open digital microfluidic systems that are often associated with electrowetting. This paper demonstrates that, by...

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Graphene-on-insulator transistors made using C on Ni chemical-vapor deposition

Published in:
IEEE Electron Device Lett., Vol. 30, No. 7, July 2009, pp. 745-747.
Topic:

Summary

Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO2 substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.
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Summary

Graphene transistors are made by transferring a thin graphene film grown on Ni onto an insulating SiO2 substrate. The properties and integration of these graphene-on-insulator transistors are presented and compared to the characteristics of devices made from graphitized SiC and exfoliated graphene flakes.

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A multi-frame, megahertz CCD imager

Published in:
IEEE Trans. Nuclear Sci., Vol. 56, No. 3, June 2009, pp. 1188-1192.

Summary

The Los Alamos National Laboratory's Dual Axis Radiographic Hydrodynamic Test Facility (DARHT) generates flash radiographs of explosive experiments using two linear induction electron accelerators situated at right angles. The DARHT second axis accelerator generates an 18-MeV, 2 kA, 2 sec electron beam which is converted or "chopped" into four individual pulses ranging from 20 to 100 nsec in length at 2 MHz frequency. The individual electron beam pulses are down-converted by a segmented lutetium oxyorthosilicate scintillator, creating four visible light flashes, to image explosively driven events. To record these events, a high efficiency, high speed, imager has been fabricated which is capable of framing rates of 2 MHz. This device utilizes a 512 512 pixel charge coupled device (CCD) with a 25 cm2 active area, and incorporates an electronic shutter technology designed for back-illuminated CCD's, making this the largest and fastest back-illuminated CCD in the world. Characterizing an imager capable of this frame rate presents unique challenges. High speed LED drivers and intense radioactive sources are needed to perform basic measurements.We investigate properties normally associated with single-frame CCDs such as read noise, gain, full-well capacity, detective quantum efficiency (DQE), sensitivity, and linearity. In addition, we investigate several properties associated with the imager's multi-frame operation such as transient frame response and frame-to-frame isolation while contrasting our measurement techniques and results with more conventional devices.
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Summary

The Los Alamos National Laboratory's Dual Axis Radiographic Hydrodynamic Test Facility (DARHT) generates flash radiographs of explosive experiments using two linear induction electron accelerators situated at right angles. The DARHT second axis accelerator generates an 18-MeV, 2 kA, 2 sec electron beam which is converted or "chopped" into four individual...

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Lithographically directed surface modification

Published in:
J. Vacuum Sci. Technol. B, Microelectron. Process. Phenon., Vol. 27, No. 6, p. 3031-3037.

Summary

The directed assembly of polystyrene-block-poly(methyl methacrylate) films on a variety of photolytically nanopatterned siloxane-modified surfaces was investigated. The amount of siloxane removal is related to the exposure dose of a 157 nm laser. The modified surfaces were imaged using a 157 nm interference exposure system to lithographically define areas of different surface energies to direct the assembly of the diblock copolymer films. The analysis of the surface energy aerial image provided insights into the exposure doses required to result in defect-free films. While the slope of the surface energy aerial image was not found to be important by itself, in concert with the difference in high and low surface energy regions, as well as the maximum value of the low surface energy region, it provided insight into conditions needed to direct self-assembly of the block copolymer films. Preliminary investigations concerning the extension of this methodology to 193 nm showed that the polar surface energy of arylsiloxane-modified surfaces can also be affected by 193 nm exposure.
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Summary

The directed assembly of polystyrene-block-poly(methyl methacrylate) films on a variety of photolytically nanopatterned siloxane-modified surfaces was investigated. The amount of siloxane removal is related to the exposure dose of a 157 nm laser. The modified surfaces were imaged using a 157 nm interference exposure system to lithographically define areas of...

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Ultra-wideband offset bicone/dipole antenna: simulations and measurements

Author:
Published in:
Ann. Rev. of Progress in Applied Computational Electromagnetics, 8-12 March 2009.

Summary

An ultrawideband (UWB) antenna has been developed for operation in the 60 MHz to 18 GHz frequency range. This antenna is a new type--an offset bicone/dipole design that allows for vertically polarized omnidirectional coverage over an instantaneous 300:1 bandwidth. Numerical electromagnetic simulations with the finite-element method (FEM) were used to investigate the antenna concept and optimize geometry prior to fabrication. Measurements both outdoors and in an anechoic chamber confirm the antenna's performance.
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Summary

An ultrawideband (UWB) antenna has been developed for operation in the 60 MHz to 18 GHz frequency range. This antenna is a new type--an offset bicone/dipole design that allows for vertically polarized omnidirectional coverage over an instantaneous 300:1 bandwidth. Numerical electromagnetic simulations with the finite-element method (FEM) were used to...

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