Publications

Refine Results

(Filters Applied) Clear All

Improvement of SOI MOSFET RF performance by implant optimization

Published in:
IEEE Microw. Wirel. Compon. Lett., Vol. 20, No. 5, May 2010, pp. 271-273.

Summary

The characteristics of silicon on insulator MOSFETs are modified to enhance the RF performance by varying channel implants. Without adding new masks or fabrication steps to the standard CMOS process, this approach can be easily applied in standard foundry fabrication. The transconductance, output resistance, and breakdown voltage can be increased by eliminating channel and drain extension implants. As a result, the fmax of the modified n-MOSFET with a 150 nm gate length exceeds 120 GHz, showing a 20% improvement over the standard MOSFET for digital circuits on the same wafer.
READ LESS

Summary

The characteristics of silicon on insulator MOSFETs are modified to enhance the RF performance by varying channel implants. Without adding new masks or fabrication steps to the standard CMOS process, this approach can be easily applied in standard foundry fabrication. The transconductance, output resistance, and breakdown voltage can be increased...

READ MORE

Hybridization process for back-illuminated silicon Geiger-mode avalanche photodiode arrays

Published in:
SPIE Vol. 7681, Advanced Photon Counting Techniques IV, 5 April 2010, 76810P.

Summary

We present a unique hybridization process that permits high-performance back-illuminated silicon Geiger-mode avalanche photodiodes (GM-APDs) to be bonded to custom CMOS readout integrated circuits (ROICs) - a hybridization approach that enables independent optimization of the GM-APD arrays and the ROICs. The process includes oxide bonding of silicon GM-APD arrays to a transparent support substrate followed by indium bump bonding of this layer to a signal-processing ROIC. This hybrid detector approach can be used to fabricate imagers with high-fill-factor pixels and enhanced quantum efficiency in the near infrared as well as large-pixel-count, small-pixel-pitch arrays with pixel-level signal processing. In addition, the oxide bonding is compatible with high-temperature processing steps that can be used to lower dark current and improve optical response in the ultraviolet.
READ LESS

Summary

We present a unique hybridization process that permits high-performance back-illuminated silicon Geiger-mode avalanche photodiodes (GM-APDs) to be bonded to custom CMOS readout integrated circuits (ROICs) - a hybridization approach that enables independent optimization of the GM-APD arrays and the ROICs. The process includes oxide bonding of silicon GM-APD arrays to...

READ MORE

Noncontact detection of homemade explosive constituents via photodissociation followed by laser-induced fluorescence

Published in:
Opt. Express, Vol. 18, No. 6, 15 March 2010, pp. 5399-5406.

Summary

Noncontact detection of the homemade explosive constituents urea nitrate, nitromethane and ammonium nitrate is achieved using photodissociation followed by laser-induced fluorescence (PD-LIF). Our technique utilizes a single ultraviolet laser pulse (~7 ns) to vaporize and photodissociate the condensed-phase materials, and then to detect the resulting vibrationally-excited NO fragments via laser-induced fluorescence. PD-LIF excitation and emission spectra indicate the creation of NO in vibrationally-excited states with significant rotational energy, useful for low-background detection of the parent compound. The results for homemade explosives are compared to one another and 2,6- dinitrotoluene, a component present in many military explosives.
READ LESS

Summary

Noncontact detection of the homemade explosive constituents urea nitrate, nitromethane and ammonium nitrate is achieved using photodissociation followed by laser-induced fluorescence (PD-LIF). Our technique utilizes a single ultraviolet laser pulse (~7 ns) to vaporize and photodissociate the condensed-phase materials, and then to detect the resulting vibrationally-excited NO fragments via laser-induced...

READ MORE

FDSOI process technology for subthreshold-operation ultralow-power electronics

Published in:
Proc. of the IEEE, Vol. 98, No. 2, February 2010, pp. 333-342.
Topic:

Summary

Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation at 0.3 V may achieve a 97% reduction in switching energy compared to conventional transistors. The process technology described in this article takes advantage of the capacitance and performance benefits of thin-body silicon-oninsulator devices, combined with a workfunction engineered mid-gap metal gate.
READ LESS

Summary

Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation...

READ MORE

Metastable superconducting qubit

Published in:
Phys. Rev. Lett., Vol. 104, No.2, 11 January 2010, 027002.

Summary

We propose a superconducting qubit design, based on a tunable rf SQUID and nanowire kinetic inductors, which has a dramatically reduced transverse electromagnetic coupling to its environment, so that its excited state should be metastable. If electromagnetic interactions are in fact responsible for the current excited-state decay rates of superconducting qubits, this design should result in a qubit lifetime orders of magnitude longer than currently possible. Furthermore, since accurate manipulation and readout of superconducting qubits is currently limited by spontaneous decay, much higher fidelities may be realizable with this design.
READ LESS

Summary

We propose a superconducting qubit design, based on a tunable rf SQUID and nanowire kinetic inductors, which has a dramatically reduced transverse electromagnetic coupling to its environment, so that its excited state should be metastable. If electromagnetic interactions are in fact responsible for the current excited-state decay rates of superconducting...

READ MORE

30 to 50 ns liquid-crystal optical switches

Published in:
Optics Express, Vol. 18, No. 18, 30 August 2010, pp. 1886-18893.

Summary

The optical switching time of twisted-nematic liquid-crystal cells using the liquid crystals, 5CB (C,H,,-Ph-Ph-CN), 50CB(C,Hw O-Ph-Ph-CN) and PCH5 (C,H,,-Cy-Ph-CN) have been characterized as a function of temperature, prebias voltage and switching voltage, V. The transition time from 90 % to 10 % transmission scales as V-1.9 and is limited to 30 to 50 ns by the liquid-crystal breakdown electric field, - 100 V I'm-I The time fi-om the initial switching voltage step to 90 % transmission, delay time, decreases with increasing prebias and switching voltage. For 5CB and 50CS the delay time approaches a constant value at higher electric fields, >10 V ~1Il,-1. Both the transition and delay times decrease with increasing temperature. The minimum transition time at temperatures a few degrees below the nematicisotropic temperature are 32, 32, and 44 ns and delay times are 44, 25 and 8 ns for 5CB, 50CB, and PCH5 respectively.
READ LESS

Summary

The optical switching time of twisted-nematic liquid-crystal cells using the liquid crystals, 5CB (C,H,,-Ph-Ph-CN), 50CB(C,Hw O-Ph-Ph-CN) and PCH5 (C,H,,-Cy-Ph-CN) have been characterized as a function of temperature, prebias voltage and switching voltage, V. The transition time from 90 % to 10 % transmission scales as V-1.9 and is limited to...

READ MORE

Operation and optimization of silicon-diode-based optical modulators

Published in:
IEEE J. Sel. Top. in Quantum Electron., Vol. 16, No. 1, January/February 2010, pp. 165-172.

Summary

An optical modulator in silicon based on a diode structure has been operated in both forward and reverse bias. This modulator achieves near state-of-the-art performance in both modes, thereby making this device idea for comparing the two modes of operation. In reverse bias, the device has a V[pi]L of 4.9 V-cm and a bandwidth of 26GHz. In forward bias, the device is very sensitive, a V[pi]L a slow as 0.0025 V-cm has been achieved, but the bandwidth is only 100 MHz. A ndw geometyr for a reverse-bias device is proposed, and it is predicted to achieve a V[pi]L of 0.5V.cm.
READ LESS

Summary

An optical modulator in silicon based on a diode structure has been operated in both forward and reverse bias. This modulator achieves near state-of-the-art performance in both modes, thereby making this device idea for comparing the two modes of operation. In reverse bias, the device has a V[pi]L of 4.9...

READ MORE

Effects of ionizing radiation on digital single event transients in a 180-nm fully depleted SOI process

Published in:
2009 IEEE Nuclear & Space Radiation Effects Conf., 07/20/2009 [in: IEEE Trans. Nuclear Sci., Vol. 56, No. 9, December 2009, pp. 3477-3482].

Summary

Effects of ionizing radiation on single event transients are reported for Fully Depleted SOI (FDSOI) technology using experiments and simulations. Logic circuits, i.e. CMOS inverter chains, were irradiated with cobalt-60 gamma radiation. When charge is induced in the n-channel FET with laser-probing techniques, laser-induced transients widen with increased total dose. This is because radiation causes charge to be trapped in the buried oxide, and reduces the p-channel FET drive current. When the p-channel FET drive current is reduced, the time required to restore the output of the laser-probed FET back to its original condition is increased, i.e. the upset transient width is increased. A widening of the transient pulse is also observed when a positive bias is applied to the wafer without any exposure to radiation. This is because a positive wafer bias reproduces the shifts inFET threshold voltages that occur during total dose irradiation. Results were also verified with heavy ion testing and mixed mode simulations.
READ LESS

Summary

Effects of ionizing radiation on single event transients are reported for Fully Depleted SOI (FDSOI) technology using experiments and simulations. Logic circuits, i.e. CMOS inverter chains, were irradiated with cobalt-60 gamma radiation. When charge is induced in the n-channel FET with laser-probing techniques, laser-induced transients widen with increased total dose...

READ MORE

Measurement of trace explosive residues in a surrogate operational environment: implications for tactical use of chemical sensing in C-IED operations

Published in:
26th Army Science Conf., 1 December 2008 (Anal. Bioanal. Chem., Vol. 395, pp. 357-369).

Summary

A campaign to measure the amount of trace explosive residues in an operational military environment was conducted on May 27?31, 2007, at the National Training Center at Fort Irwin, CA, USA. The objectives of this campaign were to develop the methods needed to collect and analyze samples from tactical military settings, to use the data obtained to determine what the trace explosive signatures suggest about the potential capabilities of chemical-based means to detect IEDs, and, finally, to present a framework whereby a sound understanding of the signature science can be used to guide development of new sensing technologies and sensor concepts of operation. Through our use of combined background and threat signature data, we have performed statistical analyses to estimate upper limits of notional sensor performance that is limited only by the spatial correlation of the signature chemicals to the threats of interest.
READ LESS

Summary

A campaign to measure the amount of trace explosive residues in an operational military environment was conducted on May 27?31, 2007, at the National Training Center at Fort Irwin, CA, USA. The objectives of this campaign were to develop the methods needed to collect and analyze samples from tactical military...

READ MORE

Three-dimensional integration technology for advanced focal planes

Summary

We have developed a three-dimensional (3D) circuit integration technology that exploits the advantages of silicon-on-insulator (SOI) technology to enable wafer-level stacking and micrometer-scale electrical interconnection of fully fabricated circuit wafers. This paper describes the 3D technology and discusses some of the advanced focal plane arrays that have been built using it.
READ LESS

Summary

We have developed a three-dimensional (3D) circuit integration technology that exploits the advantages of silicon-on-insulator (SOI) technology to enable wafer-level stacking and micrometer-scale electrical interconnection of fully fabricated circuit wafers. This paper describes the 3D technology and discusses some of the advanced focal plane arrays that have been built using...

READ MORE