Publications
Polymer matrix effects on acid generation
Summary
Summary
We have measured the acid generation efficiency with EUV exposure of a PAG in different polymer matrixes representing the main classes of resist polymers as well as some previously described fluoropolymers for lithographic applications. The polymer matrix was found to have a significant effect on the acid generation efficiency of...
X-band receiver front-end chip in silicon germanium technology
Summary
Summary
This paper reports a demonstration of X-band receiver RF front-end components and the integrated chipset implemented in 0.18 mum silicon germanium (SiGe) technology. The system architecture consists of a single down conversion from X-band at the input to S-band at the intermediate frequency (IF) output. The microwave monolithic integrated circuit...
Design approaches for digitally dominated active pixel sensors: leveraging Moore's law scaling in focal plane readout design
Summary
Summary
Although CMOS technology scaling has provided tremendous power and circuit density benefits for innumerable applications, focal plane array (FPA) readouts have largely been left behind due to dynamic range and signal-to-noise considerations. However, if an appropriate pixel front end can be constructed to interface with a mostly digital pixel, it...
All silicon infrared photodiodes: photo response and effects of processing temperature
Summary
Summary
CMOS compatible infrared waveguide Si photodiodes are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. This article compares diodes fabricated using two annealing temperatures, 300 and 475C. 0.25-mm-long diodes annealed to 300C have a response to 1539 nm radiation of 0.1 A W-1 at a reverse...
Irreversible electrowetting on thin fluoropolymer films
Summary
Summary
A study was conducted to investigate electrowetting reversibility associated with repeated voltage actuations for an aqueous droplet situated on a silicon dioxide insulator coated with an amorphous fluoropolymer film ranging in thickness from 20 to 80 nm. The experimental results indicate that irreversible trapped charge may occur at the aqueous-solid...
A low-loss double-tuned transformer
Summary
Summary
In this letter, we present a state-of-the-art, planar double-tuned transformer using high- , micromachined spiral inductors and integrated capacitors. This circuit provides a 4:1 impedance transformation over a 30% bandwidth centered at 4.06 GHz, with a minimum insertion loss of 1.50 dB. The fabricated circuit occupies a total area of...
Advanced trigger development
Summary
Summary
The deadliest form of a biological attack is aerosolized agents dispersed into the atmosphere. Early detection of aerosolized biological agents is important for defense against these agents. Because of the wide range of possible attack scenarios and attack responses, there is also a wide range of detector requirements. This article...
Design of an optical photon counting array receiver system for deep-space communications
Summary
Summary
Demand for increased capacity in deep-space to Earth communications systems continues to rise as sensor data rates climb and mission requirements expand. Optical freespace laser communications systems offer the potential for operating at data rates 10 to 1000 times that of current radiofrequency systems. A key element in an optical...
Scaling three-dimensional SOI integrated-circuit technology
Summary
Summary
Introduction At Lincoln Laboratory, we have established a three dimensional (3D) integrated circuit (IC) technology that has been developed and demonstrated over seven designs, bonding two or three active circuit layers or tiers to form monolithically integrated 3D circuits. Key features of our 3DIC technology include fully depleted SOI (FDSOI)...
Back-illuminated three-dimensionally integrated CMOS image sensors for scientific applications
Summary
Summary
SOI-based active pixel image sensors have been built in both monolithic and vertically interconnected pixel technologies. The latter easily supports the inclusion of more complex pixel circuitry without compromising pixel fill factor. A wafer-scale back-illumination process is used to achieve 100% fill factor photodiodes. Results from 256 x 256 and...